A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's

A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's

10.1109/16.678559

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Bibliographic Details
Main Authors: Lou, C.-L., Chim, W.-K., Chan, D.S.-H., Pan, Y.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Hot carrier
Mobility
Mos transistor
MOSFET
Parameter extraction
Reliability
Series resistance
Online Access:http://scholarbank.nus.edu.sg/handle/10635/54649
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Institution: National University of Singapore
Description
Summary:10.1109/16.678559

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