A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's

10.1109/16.678559

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Bibliographic Details
Main Authors:	Lou, C.-L., Chim, W.-K., Chan, D.S.-H., Pan, Y.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	Hot carrier Mobility Mos transistor MOSFET Parameter extraction Reliability Series resistance
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/54649
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-546492023-08-29T20:59:12Z A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's Lou, C.-L. Chim, W.-K. Chan, D.S.-H. Pan, Y. ELECTRICAL ENGINEERING Hot carrier Mobility Mos transistor MOSFET Parameter extraction Reliability Series resistance 10.1109/16.678559 IEEE Transactions on Electron Devices 45 6 1317-1323 IETDA 2014-06-16T09:33:21Z 2014-06-16T09:33:21Z 1998 Article Lou, C.-L., Chim, W.-K., Chan, D.S.-H., Pan, Y. (1998). A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's. IEEE Transactions on Electron Devices 45 (6) : 1317-1323. ScholarBank@NUS Repository. https://doi.org/10.1109/16.678559 00189383 http://scholarbank.nus.edu.sg/handle/10635/54649 000073624000022 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Hot carrier Mobility Mos transistor MOSFET Parameter extraction Reliability Series resistance
spellingShingle	Hot carrier Mobility Mos transistor MOSFET Parameter extraction Reliability Series resistance Lou, C.-L. Chim, W.-K. Chan, D.S.-H. Pan, Y. A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's
description	10.1109/16.678559
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Lou, C.-L. Chim, W.-K. Chan, D.S.-H. Pan, Y.
format	Article
author	Lou, C.-L. Chim, W.-K. Chan, D.S.-H. Pan, Y.
author_sort	Lou, C.-L.
title	A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's
title_short	A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's
title_full	A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's
title_fullStr	A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's
title_full_unstemmed	A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's
title_sort	novel single-device dc method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered mosfet's
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/54649
_version_	1775626941415555072

A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's

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