A simple and efficient model for quantization effects of hole inversion layers in MOS devices

10.1109/16.974723

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Bibliographic Details
Main Authors:	Hou, Y.-T., Li, M.-F.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	Inversion layers MOS devices Quantization
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/54803
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-54803
record_format	dspace
spelling	sg-nus-scholar.10635-548032015-01-06T19:27:19Z A simple and efficient model for quantization effects of hole inversion layers in MOS devices Hou, Y.-T. Li, M.-F. ELECTRICAL ENGINEERING ELECTRICAL & COMPUTER ENGINEERING Inversion layers MOS devices Quantization 10.1109/16.974723 IEEE Transactions on Electron Devices 48 12 2893-2898 IETDA 2014-06-17T02:35:42Z 2014-06-17T02:35:42Z 2001-12 Article Hou, Y.-T.,Li, M.-F. (2001-12). A simple and efficient model for quantization effects of hole inversion layers in MOS devices. IEEE Transactions on Electron Devices 48 (12) : 2893-2898. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/16.974723" target="_blank">https://doi.org/10.1109/16.974723</a> 00189383 http://scholarbank.nus.edu.sg/handle/10635/54803 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	Inversion layers MOS devices Quantization
spellingShingle	Inversion layers MOS devices Quantization Hou, Y.-T. Li, M.-F. A simple and efficient model for quantization effects of hole inversion layers in MOS devices
description	10.1109/16.974723
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Hou, Y.-T. Li, M.-F.
format	Article
author	Hou, Y.-T. Li, M.-F.
author_sort	Hou, Y.-T.
title	A simple and efficient model for quantization effects of hole inversion layers in MOS devices
title_short	A simple and efficient model for quantization effects of hole inversion layers in MOS devices
title_full	A simple and efficient model for quantization effects of hole inversion layers in MOS devices
title_fullStr	A simple and efficient model for quantization effects of hole inversion layers in MOS devices
title_full_unstemmed	A simple and efficient model for quantization effects of hole inversion layers in MOS devices
title_sort	simple and efficient model for quantization effects of hole inversion layers in mos devices
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/54803
_version_	1681084381631873024

A simple and efficient model for quantization effects of hole inversion layers in MOS devices

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