Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions

Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions

10.1063/1.1597990

Saved in:
Bibliographic Details
Main Authors: Liu, W., Chua, S.J., Zhang, X.H., Zhang, J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55746
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1063/1.1597990

Similar Items