Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions

• Main Authors: Liu, W., Chua, S.J., Zhang, X.H., Zhang, J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/55746
• Institution: National University of Singapore

10.1063/1.1597990