Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions

10.1063/1.1597990

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書目詳細資料
Main Authors: Liu, W., Chua, S.J., Zhang, X.H., Zhang, J.
其他作者: ELECTRICAL & COMPUTER ENGINEERING
格式: Article
出版: 2014
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/55746
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機構: National University of Singapore
實物特徵
總結:10.1063/1.1597990