Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge (001) Schottky contacts

10.1063/1.2408665

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Bibliographic Details
Main Authors:	Yao, H.B., Chi, D.Z., Li, R., Lee, S.J., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/55764
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Institution:	National University of Singapore

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Summary:	10.1063/1.2408665

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