Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN

Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN

10.1016/j.apsusc.2005.03.195

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Bibliographic Details
Main Authors: Wang, X.C., Lim, G.C., Liu, W., Soh, C.B., Chua, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
248 nm KrF excimer laser
Electrical property
Laser-induced activation
Mg-doped GaN
Optical property
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55768
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/55768

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