Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN

• Main Authors: Wang, X.C., Lim, G.C., Liu, W., Soh, C.B., Chua, S.J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: 248 nm KrF excimer laser; Electrical property; Laser-induced activation; Mg-doped GaN; Optical property
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/55768
• Institution: National University of Singapore

10.1016/j.apsusc.2005.03.195