Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions

Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions

10.1063/1.1846152

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Bibliographic Details
Main Authors: Yeo, Y.-C., Sun, J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56065
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Institution: National University of Singapore
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Summary:10.1063/1.1846152

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