Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions
10.1063/1.1846152
Saved in:
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Published: |
2014
|
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/56065 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | National University of Singapore |
| id |
sg-nus-scholar.10635-56065 |
|---|---|
| record_format |
dspace |
| spelling |
sg-nus-scholar.10635-560652023-10-29T23:04:59Z Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions Yeo, Y.-C. Sun, J. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1846152 Applied Physics Letters 86 2 023103-1 APPLA 2014-06-17T02:50:18Z 2014-06-17T02:50:18Z 2005-01-10 Article Yeo, Y.-C., Sun, J. (2005-01-10). Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions. Applied Physics Letters 86 (2) : 023103-1. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1846152 00036951 http://scholarbank.nus.edu.sg/handle/10635/56065 000226701500065 Scopus |
| institution |
National University of Singapore |
| building |
NUS Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NUS Library |
| collection |
ScholarBank@NUS |
| description |
10.1063/1.1846152 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Yeo, Y.-C. Sun, J. |
| format |
Article |
| author |
Yeo, Y.-C. Sun, J. |
| spellingShingle |
Yeo, Y.-C. Sun, J. Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions |
| author_sort |
Yeo, Y.-C. |
| title |
Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions |
| title_short |
Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions |
| title_full |
Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions |
| title_fullStr |
Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions |
| title_full_unstemmed |
Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions |
| title_sort |
finite-element study of strain distribution in transistor with silicon-germanium source and drain regions |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/56065 |
| _version_ |
1781781105118019584 |