High-speed metal-germanium-metal configured PIN-like Ge-photodetector under photovoltaic mode and with dopant-segregated Schottky-contact engineering

High-speed metal-germanium-metal configured PIN-like Ge-photodetector under photovoltaic mode and with dopant-segregated Schottky-contact engineering

10.1109/LPT.2008.2005586

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Bibliographic Details
Main Authors: Zang, H., Lee, S., Yu, M., Loh, W.Y., Wang, J., Lo, G.-Q., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Dopant segregation
Metal-germanium-metal (MGM)
Photodetectors (PDs)
Schottky-contact
Si-waveguide
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56210
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Institution: National University of Singapore
Description
Summary:10.1109/LPT.2008.2005586

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