High-speed metal-germanium-metal configured PIN-like Ge-photodetector under photovoltaic mode and with dopant-segregated Schottky-contact engineering

• Main Authors: Zang, H., Lee, S., Yu, M., Loh, W.Y., Wang, J., Lo, G.-Q., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Dopant segregation; Metal-germanium-metal (MGM); Photodetectors (PDs); Schottky-contact; Si-waveguide
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/56210
• Institution: National University of Singapore

10.1109/LPT.2008.2005586