Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire

Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire

10.1016/j.tsf.2006.07.181

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Bibliographic Details
Main Authors: Yong, A.M., Soh, C.B., Zhang, X.H., Chow, S.Y., Chua, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
InGaN/GaN heterostructures
Multiple quantum wells
Photoluminescence
V-defects
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56409
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Institution: National University of Singapore
Description
Summary:10.1016/j.tsf.2006.07.181

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