Modeling the trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing using stress-induced leakage current

Modeling the trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing using stress-induced leakage current

10.1063/1.1516266

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Bibliographic Details
Main Authors: Chim, W.K., Tan, Y.N.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56677
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Institution: National University of Singapore
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Summary:10.1063/1.1516266

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