Parasitic capacitance characteristics of deep submicrometre grooved gate MOSFETs

10.1088/0268-1242/17/3/301

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Bibliographic Details
Main Authors: Sreelal, S., Lau, C.K., Samudra, G.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56991
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Institution: National University of Singapore