Physical mechanism of oxide interfacial traps, carrier mobility degradation and series resistance on contrast reversal in scanning-capacitance-microscopy dopant concentration extraction

10.1063/1.2006979

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Bibliographic Details
Main Authors: Wong, K.M., Chim, W.K., Yan, J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57058
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Institution: National University of Singapore
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