Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performance

Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performance

10.1088/0268-1242/23/2/025009

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Bibliographic Details
Main Authors: Zhu, Z.G., Low, T., Li, M.F., Fan, W.J., Bai, P., Kwong, D.L., Samudra, G.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57149
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Institution: National University of Singapore
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Summary:10.1088/0268-1242/23/2/025009

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