Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performance
10.1088/0268-1242/23/2/025009
Saved in:
Main Authors: | Zhu, Z.G., Low, T., Li, M.F., Fan, W.J., Bai, P., Kwong, D.L., Samudra, G. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/57149 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Modeling study of InSb thin film for advanced III-V MOSFET applications
by: Zhu, Z.G., et al.
Published: (2014) -
Simulation study of plasma wave generation and nonlinearity in InSb semiconductor
by: Rajendran, K.
Published: (2014) -
Simulation study of plasma wave generation and nonlinearity in InSb semiconductor
by: Rajendran, K.
Published: (2014) -
Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors
by: Low, T., et al.
Published: (2014) -
Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model
by: Li, S., et al.
Published: (2013)