Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment

Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment

10.1063/1.3010303

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Bibliographic Details
Main Authors: Chin, H.-C., Wang, B., Lim, P.-C., Tang, L.-J., Tung, C.-H., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57540
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/57540

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