Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment

10.1063/1.3010303

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Bibliographic Details
Main Authors: Chin, H.-C., Wang, B., Lim, P.-C., Tang, L.-J., Tung, C.-H., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57540
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Institution: National University of Singapore
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