Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers
Applied Surface Science
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sg-nus-scholar.10635-619162015-03-03T22:05:21Z Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers Ling, C.H. Tay, T.M. ELECTRICAL ENGINEERING Applied Surface Science 59 2 105-110 ASUSE 2014-06-17T06:45:25Z 2014-06-17T06:45:25Z 1992 Article Ling, C.H.,Tay, T.M. (1992). Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers. Applied Surface Science 59 (2) : 105-110. ScholarBank@NUS Repository. 01694332 http://scholarbank.nus.edu.sg/handle/10635/61916 NOT_IN_WOS Scopus |
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Applied Surface Science |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Ling, C.H. Tay, T.M. |
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Ling, C.H. Tay, T.M. |
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Ling, C.H. Tay, T.M. Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers |
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Ling, C.H. |
title |
Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers |
title_short |
Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers |
title_full |
Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers |
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Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers |
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Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers |
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capacitance-voltage measurements on mos capacitors fabricated on polycrystalline silicon wafers |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/61916 |
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