EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.

EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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Main Authors: Ling, C.H., Kwok, C.Y., Prasad, K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62091
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Institution: National University of Singapore
id sg-nus-scholar.10635-62091
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spelling sg-nus-scholar.10635-620912015-02-03T18:28:57Z EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C. Ling, C.H. Kwok, C.Y. Prasad, K. ELECTRICAL ENGINEERING Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 24 9 1238-1239 JAPND 2014-06-17T06:47:19Z 2014-06-17T06:47:19Z 1985-09 Article Ling, C.H.,Kwok, C.Y.,Prasad, K. (1985-09). EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 24 (9) : 1238-1239. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/62091 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Ling, C.H.
Kwok, C.Y.
Prasad, K.
format Article
author Ling, C.H.
Kwok, C.Y.
Prasad, K.
spellingShingle Ling, C.H.
Kwok, C.Y.
Prasad, K.
EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.
author_sort Ling, C.H.
title EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.
title_short EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.
title_full EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.
title_fullStr EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.
title_full_unstemmed EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.
title_sort effect of oxygen incorporation of bhf etch rate of plasma-enhanced cvd silicon nitride films prepared in the temperature range 50-300 degree c.
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/62091
_version_ 1681085712468803584

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