EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/62091 |
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| Institution: | National University of Singapore |