Study of gap states in hydrogenated amorphous silicon carbide and amorphous carbon grown with ECR-CVD

• المؤلف الرئيسي: Chew, Kerlit.
• مؤلفون آخرون: Rusli
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/4127

One of the attractive properties of amorphous semiconductors is that their characteristics can be varied through changing their composition. As such, a wide variety of hydrogenated amorphous silicon alloys have been studied for their potential for various applications. In this respect, hydrogenated...