Study of gap states in hydrogenated amorphous silicon carbide and amorphous carbon grown with ECR-CVD

One of the attractive properties of amorphous semiconductors is that their characteristics can be varied through changing their composition. As such, a wide variety of hydrogenated amorphous silicon alloys have been studied for their potential for various applications. In this respect, hydrogenated...

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Main Author:	Chew, Kerlit.
Other Authors:	Rusli
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:	http://hdl.handle.net/10356/4127
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Institution:	Nanyang Technological University

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spelling	sg-ntu-dr.10356-41272023-07-04T15:58:57Z Study of gap states in hydrogenated amorphous silicon carbide and amorphous carbon grown with ECR-CVD Chew, Kerlit. Rusli School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials One of the attractive properties of amorphous semiconductors is that their characteristics can be varied through changing their composition. As such, a wide variety of hydrogenated amorphous silicon alloys have been studied for their potential for various applications. In this respect, hydrogenated amorphous silicon carbide is the most promising. Doctor of Philosophy (EEE) 2008-09-17T09:45:04Z 2008-09-17T09:45:04Z 2003 2003 Thesis http://hdl.handle.net/10356/4127 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Chew, Kerlit. Study of gap states in hydrogenated amorphous silicon carbide and amorphous carbon grown with ECR-CVD
description	One of the attractive properties of amorphous semiconductors is that their characteristics can be varied through changing their composition. As such, a wide variety of hydrogenated amorphous silicon alloys have been studied for their potential for various applications. In this respect, hydrogenated amorphous silicon carbide is the most promising.
author2	Rusli
author_facet	Rusli Chew, Kerlit.
format	Theses and Dissertations
author	Chew, Kerlit.
author_sort	Chew, Kerlit.
title	Study of gap states in hydrogenated amorphous silicon carbide and amorphous carbon grown with ECR-CVD
title_short	Study of gap states in hydrogenated amorphous silicon carbide and amorphous carbon grown with ECR-CVD
title_full	Study of gap states in hydrogenated amorphous silicon carbide and amorphous carbon grown with ECR-CVD
title_fullStr	Study of gap states in hydrogenated amorphous silicon carbide and amorphous carbon grown with ECR-CVD
title_full_unstemmed	Study of gap states in hydrogenated amorphous silicon carbide and amorphous carbon grown with ECR-CVD
title_sort	study of gap states in hydrogenated amorphous silicon carbide and amorphous carbon grown with ecr-cvd
publishDate	2008
url	http://hdl.handle.net/10356/4127
_version_	1772826942043586560

Study of gap states in hydrogenated amorphous silicon carbide and amorphous carbon grown with ECR-CVD

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