High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy

10.1063/1.116551

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Bibliographic Details
Main Authors:	Goo, C.H., Lau, W.S., Chong, T.C., Tan, L.S., Chu, P.K.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/62275
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-62275
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spelling	sg-nus-scholar.10635-622752023-10-30T09:19:54Z High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy Goo, C.H. Lau, W.S. Chong, T.C. Tan, L.S. Chu, P.K. ELECTRICAL ENGINEERING 10.1063/1.116551 Applied Physics Letters 68 6 841-843 APPLA 2014-06-17T06:49:18Z 2014-06-17T06:49:18Z 1996 Article Goo, C.H., Lau, W.S., Chong, T.C., Tan, L.S., Chu, P.K. (1996). High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy. Applied Physics Letters 68 (6) : 841-843. ScholarBank@NUS Repository. https://doi.org/10.1063/1.116551 00036951 http://scholarbank.nus.edu.sg/handle/10635/62275 A1996TT66300039 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.116551
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Goo, C.H. Lau, W.S. Chong, T.C. Tan, L.S. Chu, P.K.
format	Article
author	Goo, C.H. Lau, W.S. Chong, T.C. Tan, L.S. Chu, P.K.
spellingShingle	Goo, C.H. Lau, W.S. Chong, T.C. Tan, L.S. Chu, P.K. High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy
author_sort	Goo, C.H.
title	High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy
title_short	High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy
title_full	High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy
title_fullStr	High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy
title_full_unstemmed	High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy
title_sort	high oxygen and carbon contents in gaas epilayers grown below a critical substrate temperature by molecular beam epitaxy
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/62275
_version_	1781782145756299264

High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy

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