High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy

High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy

10.1063/1.116551

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Bibliographic Details
Main Authors: Goo, C.H., Lau, W.S., Chong, T.C., Tan, L.S., Chu, P.K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62275
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Institution: National University of Singapore
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