Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphire

Applied Physics Letters

Saved in:
Bibliographic Details
Main Authors: Hou, Y.T., Feng, Z.C., Chua, S.J., Li, M.F., Akutsu, N., Matsumoto, K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62332
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore