Carrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy

Carrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy

Journal of Applied Physics

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Bibliographic Details
Main Authors: Li, Z.-F., Lu, W., Ye, H.-J., Chen, Z.-H., Yuan, X.-Z., Dou, H.-F., Shen, S.-C., Li, G., Chua, S.J.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/61919
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/61919

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