Carrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy

• Main Authors: Li, Z.-F., Lu, W., Ye, H.-J., Chen, Z.-H., Yuan, X.-Z., Dou, H.-F., Shen, S.-C., Li, G., Chua, S.J.
• 其他作者: ELECTRICAL ENGINEERING
• 格式: Article
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/61919
• 機構: National University of Singapore

Journal of Applied Physics