Carrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy

• Main Authors: Li, Z.-F., Lu, W., Ye, H.-J., Chen, Z.-H., Yuan, X.-Z., Dou, H.-F., Shen, S.-C., Li, G., Chua, S.J.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/61919
• Institution: National University of Singapore

Journal of Applied Physics