Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing

IEEE Transactions on Electron Devices

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Bibliographic Details
Main Author:	Chim, W.-K.
Other Authors:	ELECTRICAL ENGINEERING
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/62379
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-62379
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spelling	sg-nus-scholar.10635-623792021-10-05T10:02:55Z Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing Chim, W.-K. ELECTRICAL ENGINEERING IEEE Transactions on Electron Devices 47 2 473-481 IETDA 2014-06-17T06:50:24Z 2014-06-17T06:50:24Z 2000 Chim, W.-K. (2000). Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing. IEEE Transactions on Electron Devices 47 (2) : 473-481. ScholarBank@NUS Repository. 00189383 http://scholarbank.nus.edu.sg/handle/10635/62379 000085344800032 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	IEEE Transactions on Electron Devices
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Chim, W.-K.
author	Chim, W.-K.
spellingShingle	Chim, W.-K. Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
author_sort	Chim, W.-K.
title	Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
title_short	Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
title_full	Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
title_fullStr	Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
title_full_unstemmed	Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
title_sort	latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/62379
_version_	1713205671639384064

Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing

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