Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing

Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing

IEEE Transactions on Electron Devices

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Bibliographic Details
Main Author:	Chim, W.-K.
Other Authors:	ELECTRICAL ENGINEERING
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/62379
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Institution:	National University of Singapore

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