Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation

Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation

10.1016/S0038-1101(00)00037-X

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Bibliographic Details
Main Authors: Cho, B.J., Kim, S.J., Ling, C.H., Joo, M.-S., Yeo, I.-S.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/61950
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/61950

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