Stress-induced leakage current in ultra-thin gate oxide

• المؤلف الرئيسي: Ang, Kheng Guan
• مؤلفون آخرون: Chen, Tupei
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2008
• الموضوعات: DRNTU::Business::General
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/7222
• المؤسسة: Nanyang Technological University

This thesis will explore the various oxide degradations induced by the electric field stress in 51A and 26A gate oxide which includes accumulation of positive oxide charges, generation of interface states and most importantly the SILC.