Stress-induced leakage current in ultra-thin gate oxide
This thesis will explore the various oxide degradations induced by the electric field stress in 51A and 26A gate oxide which includes accumulation of positive oxide charges, generation of interface states and most importantly the SILC.
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/7222 |
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| Institution: | Nanyang Technological University |
| Language: | English |