Stress-induced leakage current in ultra-thin gate oxide
This thesis will explore the various oxide degradations induced by the electric field stress in 51A and 26A gate oxide which includes accumulation of positive oxide charges, generation of interface states and most importantly the SILC.
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| Language: | English |
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2008
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| Online Access: | http://hdl.handle.net/10356/7222 |
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sg-ntu-dr.10356-72222019-12-10T14:07:19Z Stress-induced leakage current in ultra-thin gate oxide Ang, Kheng Guan Chen, Tupei School of Electrical and Electronic Engineering DRNTU::Business::General This thesis will explore the various oxide degradations induced by the electric field stress in 51A and 26A gate oxide which includes accumulation of positive oxide charges, generation of interface states and most importantly the SILC. Master of Science (Microelectronics) 2008-09-18T07:41:50Z 2008-09-18T07:41:50Z 2002 2002 Thesis http://hdl.handle.net/10356/7222 en Nanyang Technological University 90 p. application/pdf |
| institution |
Nanyang Technological University |
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NTU Library |
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Singapore |
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DR-NTU |
| language |
English |
| topic |
DRNTU::Business::General |
| spellingShingle |
DRNTU::Business::General Ang, Kheng Guan Stress-induced leakage current in ultra-thin gate oxide |
| description |
This thesis will explore the various oxide degradations induced by the electric field stress in 51A and 26A gate oxide which includes accumulation of positive oxide charges, generation of interface states and most importantly the SILC. |
| author2 |
Chen, Tupei |
| author_facet |
Chen, Tupei Ang, Kheng Guan |
| format |
Theses and Dissertations |
| author |
Ang, Kheng Guan |
| author_sort |
Ang, Kheng Guan |
| title |
Stress-induced leakage current in ultra-thin gate oxide |
| title_short |
Stress-induced leakage current in ultra-thin gate oxide |
| title_full |
Stress-induced leakage current in ultra-thin gate oxide |
| title_fullStr |
Stress-induced leakage current in ultra-thin gate oxide |
| title_full_unstemmed |
Stress-induced leakage current in ultra-thin gate oxide |
| title_sort |
stress-induced leakage current in ultra-thin gate oxide |
| publishDate |
2008 |
| url |
http://hdl.handle.net/10356/7222 |
| _version_ |
1681034184409219072 |