Stress-induced leakage current in ultra-thin gate oxide

• Main Author: Ang, Kheng Guan
• Other Authors: Chen, Tupei
• Format: Theses and Dissertations
• Language: English
• Published: 2008
• Subjects: DRNTU::Business::General
• Online Access: http://hdl.handle.net/10356/7222
• Institution: Nanyang Technological University

This thesis will explore the various oxide degradations induced by the electric field stress in 51A and 26A gate oxide which includes accumulation of positive oxide charges, generation of interface states and most importantly the SILC.