Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

بواسطة Joo, M.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L.
منشور في 2014

Thermal instability of effective work function in metal/high-κ stack and its material dependence

بواسطة Joo, M.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L.
منشور في 2014

Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2

بواسطة Yeo, C.C., Joo, M.S., Cho, B.J., Whang, S.J.
منشور في 2014

Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

بواسطة Mathew, S., Bera, L.K., Balasubramanian, N., Joo, M.S., Cho, B.J.
منشور في 2014

Effects of electron-beam lithography on thin gate oxide reliability

بواسطة Chong, P.F., Cho, B.J., Chor, E.F., Joo, M.S.
منشور في 2014

Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack

بواسطة Joo, M.S., Park, C.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L.
منشور في 2014

Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation

بواسطة Cho, B.J., Kim, S.J., Ling, C.H., Joo, M.-S., Yeo, I.-S.
منشور في 2014

Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions

بواسطة Chong, P.F., Cho, B.J., Chor, E.F., Joo, M.S., Yeo, I.S.
منشور في 2014

Electron-beam irradiation-induced gate oxide degradation

بواسطة Cho, B.J., Chong, P.F., Chor, E.F., Joo, M.S., Yeo, I.S.
منشور في 2014

Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

بواسطة Tan, Y.N., Chim, W.K., Choi, W.K., Joo, M.S., Cho, B.J.
منشور في 2014

Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film

بواسطة Balasubramanian, M., Bera, L.K., Mathew, S., Balasubramanian, N., Lim, V., Joo, M.S., Cho, B.J.
منشور في 2014

Reliability of thin gate oxides irradiated under X-ray lithography conditions

بواسطة Cho, B.J., Kim, S.J., Ang, C.H., Ling, C.H., Joo, M.S., Yeo, I.S.
منشور في 2014

High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation

بواسطة Tan, Y.N., Chim, W.K., Choi, W.K., Joo, M.S., Ng, T.H., Cho, B.J.
منشور في 2014

Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier Separation

بواسطة Loh, W.Y., Cho, B.C., Joo, M.S., Li, M.F., Chan, D.S.H., Mathew, S., Kwong, D.-L.
منشور في 2014

Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation

بواسطة Loh, W.-Y., Cho, B.J., Joo, M.S., Li, M.-F., Chan, D.S.H., Mathew, S., Kwong, D.-L.
منشور في 2014

Improvement of Electrical Properties of MOCVD HfO2 by Multistep Deposition

بواسطة Yeo, C.C., Cho, B.J., Joo, M.S., Whoang, S.J., Kwong, D.L., Bera, L.K., Mathew, S., Balasubramanian, N.
منشور في 2014

Does short wavelength lithography process degrade the integrity of thin gate oxide?

بواسطة Kim, S.J., Cho, B.J., Chong, P.F., Chor, E.F., Ang, C.H., Ling, C.H., Joo, M.S., Yeo, I.S.
منشور في 2014

Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric

بواسطة Joo, M.S., Cho, B.J., Yeo, C.C., Wu, N., Yu, H., Zhu, C., Li, M.F., Kwong, D.-L., Balasubramanian, N.
منشور في 2014

Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

بواسطة Joo, M.S., Cho, B.J., Yeo, C.C., Chan, D.S.H., Whoang, S.J., Mathew, S., Bera, L.K., Balasubramanian, N., Kwong, D.-L.
منشور في 2014

Energy gap and band alignment for (HfO2)x(Al 2O3)1-x on (100) Si

بواسطة Yu, H.Y., Li, M.F., Cho, B.J., Yeo, C.C., Joo, M.S., Kwong, D.-L., Pan, J.S., Ang, C.H., Zheng, J.Z., Ramanathan, S.
منشور في 2014