Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier Separation

Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier Separation

Technical Digest - International Electron Devices Meeting

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Bibliographic Details
Main Authors: Loh, W.Y., Cho, B.C., Joo, M.S., Li, M.F., Chan, D.S.H., Mathew, S., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83486
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83486

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