Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost

10.1109/ESSDERC.2010.5618195

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Bibliographic Details
Main Authors:	Koh, S.-M., Zhang, P., Ren, S.-F., Ng, C.-M., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/69561
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-69561
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spelling	sg-nus-scholar.10635-695612015-01-13T21:50:45Z Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost Koh, S.-M. Zhang, P. Ren, S.-F. Ng, C.-M. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ESSDERC.2010.5618195 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 412-415 2014-06-19T03:02:05Z 2014-06-19T03:02:05Z 2010 Conference Paper Koh, S.-M.,Zhang, P.,Ren, S.-F.,Ng, C.-M.,Samudra, G.S.,Yeo, Y.-C. (2010). Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost. 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 : 412-415. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ESSDERC.2010.5618195" target="_blank">https://doi.org/10.1109/ESSDERC.2010.5618195</a> 9781424466610 http://scholarbank.nus.edu.sg/handle/10635/69561 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/ESSDERC.2010.5618195
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Koh, S.-M. Zhang, P. Ren, S.-F. Ng, C.-M. Samudra, G.S. Yeo, Y.-C.
format	Conference or Workshop Item
author	Koh, S.-M. Zhang, P. Ren, S.-F. Ng, C.-M. Samudra, G.S. Yeo, Y.-C.
spellingShingle	Koh, S.-M. Zhang, P. Ren, S.-F. Ng, C.-M. Samudra, G.S. Yeo, Y.-C. Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost
author_sort	Koh, S.-M.
title	Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost
title_short	Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost
title_full	Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost
title_fullStr	Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost
title_full_unstemmed	Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost
title_sort	carrier transport characteristics of strained n-mosfet featuring channel proximate silicon-carbon source/drain stressors for performance boost
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/69561
_version_	1681087036330606592

Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost

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