Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost

Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost

10.1109/ESSDERC.2010.5618195

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Bibliographic Details
Main Authors:	Koh, S.-M., Zhang, P., Ren, S.-F., Ng, C.-M., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/69561
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Institution:	National University of Singapore

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