Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals

Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals

Technical Digest - International Electron Devices Meeting, IEDM

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Bibliographic Details
Main Authors: Samanta, S.K., Singh, P.K., Yoo, W.J., Samudra, G., Yeo, Y.-C., Bera, L.K., Balasubramanian, N.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70187
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/70187

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