Low switching current flux-closed magnetoresistive random access memory

10.1063/1.1557372

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Bibliographic Details
Main Authors: Zheng, Y.K., Wu, Y.H., Li, K.B., Qiu, J.J., Shen, Y.T., An, L.H., Guo, Z.B., Han, G.C., Luo, P., You, D., Liu, Z.Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70840
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Institution: National University of Singapore
Description
Summary:10.1063/1.1557372