Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channels

Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channels

10.1109/IEDM.2009.5424306

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Bibliographic Details
Main Authors: Ma, F.-J., Rustagi, S.C., Zhao, H., Samudra, G.S., Singh, N., Budhaaraju, K.D., Lo, G.Q., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70997
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Institution: National University of Singapore
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Summary:10.1109/IEDM.2009.5424306

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