RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation

RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation

Technical Digest - International Electron Devices Meeting

محفوظ في:
التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Chin, A., Chan, K.T., Huang, C.H., Chen, C., Liang, V., Chen, J.K., Chien, S.C., Sun, S.W., Duh, D.S., Lin, W.J., Zhu, C., Li, M.F., McAlister, S.P., Kwong, D.-L.
مؤلفون آخرون: ELECTRICAL & COMPUTER ENGINEERING
التنسيق: Conference or Workshop Item
منشور في: 2014
الوصول للمادة أونلاين:http://scholarbank.nus.edu.sg/handle/10635/71642
الوسوم: إضافة وسم
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المؤسسة: National University of Singapore
id sg-nus-scholar.10635-71642
record_format dspace
spelling sg-nus-scholar.10635-716422024-11-10T18:36:46Z RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation Chin, A. Chan, K.T. Huang, C.H. Chen, C. Liang, V. Chen, J.K. Chien, S.C. Sun, S.W. Duh, D.S. Lin, W.J. Zhu, C. Li, M.F. McAlister, S.P. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Technical Digest - International Electron Devices Meeting 375-378 TDIMD 2014-06-19T03:26:04Z 2014-06-19T03:26:04Z 2003 Conference Paper Chin, A.,Chan, K.T.,Huang, C.H.,Chen, C.,Liang, V.,Chen, J.K.,Chien, S.C.,Sun, S.W.,Duh, D.S.,Lin, W.J.,Zhu, C.,Li, M.F.,McAlister, S.P.,Kwong, D.-L. (2003). RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation. Technical Digest - International Electron Devices Meeting : 375-378. ScholarBank@NUS Repository. 01631918 http://scholarbank.nus.edu.sg/handle/10635/71642 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description Technical Digest - International Electron Devices Meeting
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Chin, A.
Chan, K.T.
Huang, C.H.
Chen, C.
Liang, V.
Chen, J.K.
Chien, S.C.
Sun, S.W.
Duh, D.S.
Lin, W.J.
Zhu, C.
Li, M.F.
McAlister, S.P.
Kwong, D.-L.
format Conference or Workshop Item
author Chin, A.
Chan, K.T.
Huang, C.H.
Chen, C.
Liang, V.
Chen, J.K.
Chien, S.C.
Sun, S.W.
Duh, D.S.
Lin, W.J.
Zhu, C.
Li, M.F.
McAlister, S.P.
Kwong, D.-L.
spellingShingle Chin, A.
Chan, K.T.
Huang, C.H.
Chen, C.
Liang, V.
Chen, J.K.
Chien, S.C.
Sun, S.W.
Duh, D.S.
Lin, W.J.
Zhu, C.
Li, M.F.
McAlister, S.P.
Kwong, D.-L.
RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation
author_sort Chin, A.
title RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation
title_short RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation
title_full RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation
title_fullStr RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation
title_full_unstemmed RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation
title_sort rf passive devices on si with excellent performance close to ideal devices designed by electro-magnetic simulation
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/71642
_version_ 1821218336250265600

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