Tin-incorporated source/drain and channel materials for field-effect transistors

10.1149/05009.0931ecst

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Bibliographic Details
Main Authors:	Yeo, Y.-C., Han, G., Gong, X., Wang, L., Wang, W., Yang, Y., Guo, P., Liu, B., Su, S., Zhang, G., Xue, C., Cheng, B.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/72032
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-72032
record_format	dspace
spelling	sg-nus-scholar.10635-720322024-11-08T19:06:13Z Tin-incorporated source/drain and channel materials for field-effect transistors Yeo, Y.-C. Han, G. Gong, X. Wang, L. Wang, W. Yang, Y. Guo, P. Liu, B. Su, S. Zhang, G. Xue, C. Cheng, B. ELECTRICAL & COMPUTER ENGINEERING 10.1149/05009.0931ecst ECS Transactions 50 9 931-936 2014-06-19T03:30:40Z 2014-06-19T03:30:40Z 2012 Conference Paper Yeo, Y.-C., Han, G., Gong, X., Wang, L., Wang, W., Yang, Y., Guo, P., Liu, B., Su, S., Zhang, G., Xue, C., Cheng, B. (2012). Tin-incorporated source/drain and channel materials for field-effect transistors. ECS Transactions 50 (9) : 931-936. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0931ecst 9781607683575 19385862 http://scholarbank.nus.edu.sg/handle/10635/72032 000338015300110 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/05009.0931ecst
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yeo, Y.-C. Han, G. Gong, X. Wang, L. Wang, W. Yang, Y. Guo, P. Liu, B. Su, S. Zhang, G. Xue, C. Cheng, B.
format	Conference or Workshop Item
author	Yeo, Y.-C. Han, G. Gong, X. Wang, L. Wang, W. Yang, Y. Guo, P. Liu, B. Su, S. Zhang, G. Xue, C. Cheng, B.
spellingShingle	Yeo, Y.-C. Han, G. Gong, X. Wang, L. Wang, W. Yang, Y. Guo, P. Liu, B. Su, S. Zhang, G. Xue, C. Cheng, B. Tin-incorporated source/drain and channel materials for field-effect transistors
author_sort	Yeo, Y.-C.
title	Tin-incorporated source/drain and channel materials for field-effect transistors
title_short	Tin-incorporated source/drain and channel materials for field-effect transistors
title_full	Tin-incorporated source/drain and channel materials for field-effect transistors
title_fullStr	Tin-incorporated source/drain and channel materials for field-effect transistors
title_full_unstemmed	Tin-incorporated source/drain and channel materials for field-effect transistors
title_sort	tin-incorporated source/drain and channel materials for field-effect transistors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/72032
_version_	1821209034783457280

Tin-incorporated source/drain and channel materials for field-effect transistors

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