Tin-incorporated source/drain and channel materials for field-effect transistors

Tin-incorporated source/drain and channel materials for field-effect transistors

10.1149/05009.0931ecst

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Bibliographic Details
Main Authors:	Yeo, Y.-C., Han, G., Gong, X., Wang, L., Wang, W., Yang, Y., Guo, P., Liu, B., Su, S., Zhang, G., Xue, C., Cheng, B.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/72032
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

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