Tin-incorporated source/drain and channel materials for field-effect transistors

• Main Authors: Yeo, Y.-C., Han, G., Gong, X., Wang, L., Wang, W., Yang, Y., Guo, P., Liu, B., Su, S., Zhang, G., Xue, C., Cheng, B.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Conference or Workshop Item
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/72032

10.1149/05009.0931ecst