Charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devices

Charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devices

International Symposium on IC Technology, Systems and Applications

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Bibliographic Details
Main Authors: Song, J., Chim, W.K., Chan, D.S.H., Pan, Y.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72518
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Institution: National University of Singapore
Description
Summary:International Symposium on IC Technology, Systems and Applications

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